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課程名稱 |
前瞻金氧半場效應電晶體
Advanced MOSFET Device Physics |
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開課學期 |
105-1 |
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授課對象 |
電機資訊學院 電子工程學研究所 |
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授課教師 |
考林基 |
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課號 |
EEE5048 |
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課程識別碼 |
943EU0500 |
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班次 |
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學分 |
3 |
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全/半年 |
半年 |
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必/選修 |
選修 |
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上課時間 |
星期三2,3,4(9:10~12:10) |
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上課地點 |
明達205 |
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備註 |
本課程以英語授課。與劉致為合開
總人數上限：100人 |
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Ceiba 課程網頁 |
http://ceiba.ntu.edu.tw/1051EEE5048 |
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課程簡介影片 |
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核心能力關聯 |
核心能力與課程規劃關聯圖 |
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課程大綱
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為確保您我的權利,請尊重智慧財產權及不得非法影印
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課程概述 |
1. Introduction: History and economics of semiconductor industry
2. Introduction: Moore’s law. Device performance, power consumption, economics
3. Introduction: Schroedinger and Poisson
4. Band structure (3D)
5. Band structure: 3D, 2D, 1D
6. Drift-diffusion
7. Classical MOS transistor
8. Scaling laws (Classical and ballistic)
9. Electrostatics of the MOSFET, short-channel effects, FinFET and Trigate FET
10. SOI (1)
11. SOI (2)
12. Nanowire transistors (1)
13. Nanowire transistors (2)
14. Nanowire circuits |
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課程目標 |
1. 奈米線電晶體如何用來延長莫爾定律
2. 奈米線電晶體之物理及電性以及其製造技術
3. 新穎量子力學效應，如：量子電流、金屬變遷至半導體以及傳統電晶體變遷至單電子電晶體操作
4. 應用於現實生活中之各領域：奈米電子、生醫感測技術及先進半導體研究 |
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課程要求 |
1. 由於以英文授課,學生須具備口說聽力及書寫之英文能力
2. 對於一維系統波函數(基礎近代物理)的基本認識以及電路等級之金氧半元件的觀念可以確保課程快速學習
3. 平面金氧半電晶體的元件物理以及解開控制方程式的數學能力有助於獲得三維元件之深澳數學架構 |
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預期每週課後學習時數 |
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Office Hours |
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指定閱讀 |
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參考書目 |
教科書： "Physics of Semiconductor Devices", C.A. Colinge and J.P. Colinge:
http://link.springer.com/book/10.1007%2Fb117561
" Silicon-on-Insulator Technology: Materials to VLSI, 3rd edition", JP Colinge:
http://www.springer.com/jp/book/9781402077739
"Nanowire transistors", JP Colinge and JC Greer,
http://www.cambridge.org/tw/academic/subjects/engineering/electronic-optoelectronic-devices-and-nanotechnology/nanowire-transistors-physics-devices-and-materials-one-dimension |
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評量方式
(僅供參考) |
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週次 |
日期 |
單元主題 |
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第0週 |
09/05 |
NTU class schedule |
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第0週 |
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Solutions to book problems |
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第0週 |
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Matlab |
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第0週 |
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Movies |
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第1週 |
09/14 |
Multigate Transistors:From classical to quantum semiconductor physics and modeling |
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第2週 |
09/21 |
Introduction
History of Microelectronics
Microelectronics & Taiwan
(Book: Physics of semiconductor Devices)
Basic differential equations (427-429) |
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第3週 |
09/28 |
(Book: Physics of semiconductor Devices)
Crystals and reciprocal space (414-417)
Schroedinger equation (411-413)
Particle in a box, tunneling (1-6, 331-332)
(Problems A4.1,A4.2,A4.3 on p.414-417 + Problems 1.1,1.3(x2),1.4,10.2) |
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第4週 |
10/05 |
(Book: Physics of semiconductor Devices)
Energy bands (6-42)
Metal, semiconductor, hole (6-42)
Density of states, m*, Ec, Ev (6-42)
(Problems 1.5, 1.6,1.7,1.8) |
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第6週 |
10/19 |
(Book: Physics of semiconductor Devices)
Doping (29-44, 68)
Drift-diffusion-Poisson (51-65)
Drift-diffusion-Poisson (51-65)
(Problems 1.9,1.10,1.11,1.12,2.1,2.2,2.3,2.4) |
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第7週 |
10/26 |
(Book: Physics of semiconductor Devices)
Recombination (73-93)
PN junction, Schottky diode (95-151)
Recap
(Problems 3.3,3.4,4.1,4.6,4.7,4.8) |
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第8週 |
11/02 |
" Midterm 1 "
(Book: Physics of semiconductor Devices)
Heterojunctions, laser diode (315-319)
MOS transistor: introduction (165-170)
(Problem 9.1,7.1,7.2,7.16,7.18,2.4) |
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第9週 |
11/09 |
(Book: Physics of semiconductor Devices)
Mos capacitor (170-182)
Threshold, body effect (183-196)
Subthreshold current (201-206)
Scaling rules (216-217) |
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第10週 |
11/16 |
(Book: Physics of semiconductor Devices)
Flash transistors, SOI, poly depl, high-k, DIBL, GIDL, Quantization (224-234)
Multigate FET
1D, 2D, 3D, confinement (336-348)
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第11週 |
11/23 |
FinFET, trigate
(SOI Book)
SOI - materials (28-56)
SOI - FDSOI (154-201)
SOI - FDSOI (201-216)
(Nanowire transistor chapter 2, week 10) |
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第12週 |
11/30 |
(SOI Book)
SOI - inversion/accumulation mode, capacitance model (216-231)
Nanowire transistor fabrication
VGAA - HGAA
Recap |
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第13週 |
12/07 |
Midterm 2 |
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第14週 |
12/14 |
Nanowire quantum, Landauer
Nanowire - junctionless
Junctionless transistors
(Nanowire transistor chapter 3, week 12) |
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第15週 |
12/21 |
Spin devices
Negative capacitance
Tunnel diode and tunnel FET |
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第16週 |
12/28 |
(Book: Physics of semiconductor Devices)
SET (353-360)
Metal transistors
Recap |
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第17週 |
01/04 |
Final exam |
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